SI1958DH_10 Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual N-Channel 20 V (D-S) MOSFET

Dual N-Channel 20 V (D-S) MOSFET
Si1958DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.205 at V_GS = 4.5 V
0.340 at V_GS = 2.5 V
I_D (A)^a
1.3^a
1.3^a
Q_g (Typ.)
1.2 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
APPLICATIONS
• Load Switch for Portable Applications
S₁ 1
G₁ 2
D₂ 3
6 D₁
5 G₂
4 S₂
D₁
Marking Code
CC XX
Lot Traceability
and Date Code _G1
Part # Code
D₂
G₂
Top View
Ordering Information: Si1958DH-T1-E3 (Lead (Pb)-free)
Si1958DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
T_C = 25 °C
1.3^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
1.3^a
1.3^a
T_A = 70 °C
1.2^a
A
Pulsed Drain Current
I_DM
4
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
1.0
0.61^c
T_C = 25 °C
1.25
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
0.8
0.74^{b, c}
W
T_A = 70 °C
0.47^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 220 °C/W.
Document Number: 74340
S10-0792-Rev. C, 05-Apr-10
Symbol
R_thJA
R_thJF
Typical
130
80
Maximum
170
100
Unit
°C/W
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