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| SI1926DL_10 Datasheet, PDF (1/11 Pages) Vishay Siliconix – Dual N-Channel 60 V (D-S) MOSFET | |||
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Dual N-Channel 60 V (D-S) MOSFET
Si1926DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
60
1.4 at VGS = 10 V
3.0 at VGS = 4.5 V
ID (A)
0.37
0.25
Qg (Typ.)
0.47
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠ESD Protected: 1800 V
⢠Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
APPLICATIONS
⢠Low Power Load Switch
S1 1
G1 2
D2 3
6 D1
Marking Code
D1
D2
5 G2
PD XX
Lot Traceability
4 S2
and Date Code
G1
G2
Part # Code
Top View
Ordering Information: Si1926DL-T1-E3 (Lead (Pb)-free)
Si1926DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
60
V
VGS
± 20
TC = 25 °C
0.37
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
0.30
0.34b, c
TA = 70 °C
0.27b, c
A
Pulsed Drain Current
IDM
0.65
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
0.43
0.25b, c
TC = 25 °C
0.51
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
0.33
0.30b, c
W
TA = 70 °C
0.20b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
tâ¤5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 400 °C/W.
Symbol
RthJA
RthJF
Document Number: 73684
S10-0792-Rev. D, 05-Apr-10
Typical
360
300
Maximum
415
350
Unit
°C/W
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