SI1905DL Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET

New Product
Si1905DL
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.600 @ V_GS = –4.5 V
–8
0.850 @ V_GS = –2.5 V
1.200 @ V_GS = –1.8 V
I_D (A)
"0.60
"0.50
"0.42
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 _G2
D₂ 3
4 S₂
Top View
Marking Code
QB XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–8
"8
"0.60
"0.57
"0.43
"0.41
"1.0
–0.25
–0.23
0.30
0.27
0.16
0.14
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71082
S-99188—Rev. A, 01-Nov-99
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
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