SI1905BDH Datasheet, PDF (1/7 Pages) Vishay Siliconix – Dual P-Channel 1.8-V (G-S) MOSFET

New Product
Si1905BDH
Vishay Siliconix
Dual P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.542 at V_GS = - 4.5 V
-8
0.798 at V_GS = - 2.5 V
1.2 at V_GS = - 1.8 V
I_D (A)
- 0.63
- 0.52
- 0.20
Q_g (Typ)
10.5 nC
FEATURES
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 _G2
D₂ 3
4 S₂
Marking Code
DJ XX
Lot Traceability
and Date Code
Part #
Code
Top View
Ordering Information: Si1905BDH-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
I_DM
Continuous Source-Drain Diode Current^{a, b}
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation^{a, b}
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)^{c, d}
Limit
-8
±8
- 0.63
- 0.50
- 0.58^{a, b}
- 0.47^{a, b}
- 1.8
- 0.30
- 0.25^{a, b}
0.357
- 0.301
0.301^{a, b}
0.95^{a, b}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, c}
t≤5s
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Maximum under Steady State conditions is 400 °C/W.
Symbol
R_thJA
R_thJF
Typical
360
400
300
Maximum
415
460
350
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74638
S-72340-Rev. B, 05-Nov-07
www.vishay.com
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