SI1904EDH Datasheet, PDF (1/5 Pages) Vishay Siliconix – DUAL N-CHANNEL 25-V (D-S) MOSFET

New Product
Si1904EDH
Vishay Siliconix
Dual N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.810 @ V_GS = 4.5 V
25
1.04 @ V_GS = 2.5 V
I_D (A)
0.73
0.65
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 _G2
D₂ 3
4 S₂
Top View
Marking Code
CB XX
G₁
Lot Traceability
and Date Code
Part # Code
FEATURES
D TrenchFETr Power MOSFETS: 2.5-V Rated
D ESD Protected: 1800 V
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
D₁
D₂
2 kW
2 kW
G₂
S₁
S₂
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
25
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
0.73
0.64
0.53
0.46
2
0.61
0.48
0.74
0.57
0.38
0.30
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71445
S-03929—Rev. B, 21-May-01
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
130
170
80
Maximum
170
220
100
Unit
_C/W
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