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| SI1902DL_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual N-Channel 20-V (D-S) MOSFET | |||
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Dual N-Channel 20-V (D-S) MOSFET
Si1902DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
0.385 at VGS = 4.5 V
20
0.630 at VGS = 2.5 V
ID (A)
0.70
0.54
FEATURES
⢠TrenchFET® Power MOSFETS: 2.5 V Rated
Pb-free
Available
RoHS*
COMPLIANT
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
MarakrinkginCogdeC o d e
PAA XX
Loot Tt rTaceability
and Date Code
Part # Code
Top View
Ordering Information: Si1902DL-T1 (with Tape and Reel)
Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
V
VGS
±12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 85 °C
ID
0.70
0.66
0.50
0.48
A
Pulsed Drain Current
IDM
1.0
Continuous Source Current (Diode Conduction)a
IS
0.25
0.23
Maximum Power Dissipationa
TA = 25 °C
TA = 85 °C
PD
0.30
0.27
0.16
0.14
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t ⤠5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1" x 1" FR4 Board.
Symbol
RthJA
RthJF
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 71080
S-51415âRev. H, 03-Apr-06
Typical
360
400
300
Maximum
415
460
350
Unit
°C/W
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