SI1902DL-T1-GE3 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Dual N-Channel 20 V (D-S) MOSFET

Dual N-Channel 20 V (D-S) MOSFET
Si1902DL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.385 at V_GS = 4.5 V
20
0.630 at V_GS = 2.5 V
I_D (A)
0.70
0.54
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs: 2.5 V Rated
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 G₂
D₂ 3
4 S₂
MarakrinkginCogdeC o d e
PAA X
Loot TtrTaceability
and Date Code
Part # Code
Top View
Ordering Information: Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)
Si1902DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
±12
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
0.70
0.50
0.66
0.48
A
Pulsed Drain Current
I_DM
1
Continuous Source Current (Diode Conduction)^a
I_S
0.25
0.23
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
0.30
0.16
0.27
0.14
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t 5 s
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Symbol
R_thJA
R_thJF
Typical
360
400
300
Maximum
415
460
350
Unit
°C/W
Document Number: 71080
www.vishay.com
S11-2043-Rev. J, 17-Oct-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000