 English |
|
|
|
|
|
|
|
| SI1902CDL Datasheet, PDF (1/11 Pages) Vishay Siliconix – Dual N-Channel 20 V (D-S) MOSFET | |||
| |||
|
Dual N-Channel 20 V (D-S) MOSFET
Si1902CDL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (ï)
20
0.235 at VGS = 4.5 V
0.306 at VGS = 2.5 V
ID (A)a
1.1
1
Qg (Typ.)
0.9
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
⢠Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
APPLICATIONS
⢠Load Switch and DC/DC Converter for Portable Devices
⢠High Speed Switching
S1 1
G1 2
D2 3
6 D1
Marking Code
D1
D2
5 G2
PE XX
Lot Traceability
4 S2
and Date Code
G1
G2
Part # Code
Top View
Ordering Information: Si1902CDL-T1-E3 (Lead (Pb)-free)
S1
N-Channel MOSFET
S2
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
V
VGS
± 12
TC = 25 °C
1.1
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
0.9
1b, c
TA = 70 °C
0.8b, c
A
Pulsed Drain Current (t = 300 µs)
IDM
2
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
0.35
0.25b, c
TC = 25 °C
0.42
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
0.27
0.30b, c
W
TA = 70 °C
0.23b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ï£ï 5 s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 410 °C/W.
Symbol
RthJA
RthJF
Typical
290
250
Maximum
350
300
Unit
°C/W
Document Number: 67876
www.vishay.com
S11-0867-Rev. A, 02-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese