SI1901DL Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si1901DL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
–20
r_DS(on) (W)
3.8 @ V_GS = –4.5 V
5.0 @ V_GS = –2.5 V
I_D (mA)
–180
–100
SOT-363
SC-70 (6-Leads)
S₁ 1
G₁ 2
D₂ ³
6 D₁
5 G₂
4 _S2
Top View
Marking Code
QD XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
–20
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
I_D
I_DM
P_D
T_J, T_stg
–180
–140
–500
0.20
0.13
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
Symbol
R_thJA
Limit
625
Unit
V
mA
W
_C
Unit
_C/W
Document Number: 71304
S-01886—Rev. A, 28-Aug-00
www.vishay.com
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