SI1900DL Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET

Si1900DL
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.480 @ V_GS = 10 V
0.700 @ V_GS = 4.5 V
I_D (A)
0.63
0.52
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 G₂
D₂ 3
4 S₂
Top View
Marking Code
PB XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
0.63
0.59
0.45
0.43
1.0
0.25
0.23
0.30
0.27
0.16
0.14
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71251
S-21374—Rev. C, 12-Aug-02
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
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