SI1869DH Datasheet, PDF (1/7 Pages) Vishay Siliconix – Load Switch with Level-Shift

Load Switch with Level-Shift
Si1869DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS2 (V)
r_DS(on) (Ω)
1.8 to 20
0.165 at V_IN = 4.5 V
0.222 at V_IN = 2.5 V
0.303 at V_IN = 1.8 V
I_D (A)
± 1.2
± 1.0
± 0.7
DESCRIPTION
The Si1869DH includes a P- and N-Channel MOSFET in a
single SC70-6 package. The low on-resistance P-Channel
TrenchFET is tailored for use as a load switch. The N-Chan-
nel, with an external resistor, can be used as a level-shift to
APPLICATION CIRCUITS
Si1869DH
V_IN
R1
4
Q2
6
2, 3
C1
6
V_OUT
5
ON/OFF
C_o
Q1
C_i
1
R2
R2
LOAD
GND
FEATURES
• TrenchFET^® Power MOSFETS: 1.8 V Rated
• ESD Protected: 2000 V On Input Switch,
V_ON/OFF
• 165 mΩ Low r_DS(on)
• 1.8 to 20 V Input
• 1.5 to 8 V Logic Level Control
• Low Profile, Small Footprint SC70-6 Package
• Adjustable Slew-Rate
RoHS
COMPLIANT
APPLICATIONS
• Level Shift for Portable Devices
drive the P-Channel load-switch. The N-Channel MOSFET
has internal ESD protection and can be driven by logic sig-
nals as low as 1.5 V. The Si1869DH operates on supply lines
from 1.8 to 20 V, and can drive loads up to 1.2 A.
40
t_f
35
30
I_L = 1 A
V_ON/OFF = 3 V
C_i = 10 µF
25 C_o = 1 µF
20
15 ^td(off)
10
5
t_r
0
0
2
4
6
R2 (kΩ)
t_d(on)
8
10
Note: For R2 switching variations with other V_IN/R1
combinations See Typical Characteristics
Switching Variation
R2 at V_IN = 2.5 V, R1 = 20 kΩ
COMPONENTS
R1
Pull-Up Resistor
Typical 10 kΩ to 1 MegaΩ*
R2 Optional Slew-Rate Control
Typical 0 to 100 kΩ*
C1 Optional Slew-Rate Control
Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
The Si1869DH is ideally suited for high-side load switching in
portable applications. The integrated N-Channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
Document Number: 73449
S-61965-Rev. B, 09-Oct-06
www.vishay.com
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