SI1867DL Datasheet, PDF (1/5 Pages) Vishay Siliconix – Load Switch with Level-Shift

New Product
Load Switch with Level-Shift
Si1867DL
Vishay Siliconix
PRODUCT SUMMARY
V_DS2 (V)
r_DS(on) (W)
1.8 to 8
0.600 @ V_IN = 4.5 V
0.850 @ V_IN = 2.5 V
1.200 @ V_IN = 1.8 V
I_D (A)
"0.6
"0.5
"0.4
FEATURES
D TrenchFETr Power MOSFET
D Lead Free
D 600-mW Low r_DS(on)
D 1.8- to 8-V Input
D 1.5- to 8-V Logic Level Control
D Lead Free
APPLICATIONS
D Load Switch with Level-Shift for Portable
Applications
DESCRIPTION
The Si1867DL includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The n-channel,
with an external resistor, can be used as a level-shift to drive
the p-channel load-switch. The n-channel MOSFET has
internal ESD protection and can be driven by logic signals as
low as 1.5-V. The Si1867DL operates on supply lines from 1.8
to 8 V, and can drive loads up to 0.6 A.
APPLICATION CIRCUITS
Si1867DL
V_IN
R1
4
Q2
6
2, 3
C1
6
5
ON/OFF
C_o
Q1
C_i
1
R2
R2
V_OUT
LOAD
GND
Switching Variation
R2 @ V_IN = 2.5 V, R1 = 20 kW
12
I_L = 1 A
V_ON/OFF = 3 V
t_r
10 ^Ci ^{= 10 mF}
C_o = 1 mF
8
t_f
6
4
t_d(off)
2
t_d(on)
0
0
2
4
6
8
10
R2 (kW)
Note: For R2 switching variations with other V_IN/R1
combinations See Typical Characteristics
COMPONENTS
R1
Pull-Up Resistor
Typical 10 kW to 1 mW*
R2
Optional Slew-Rate Control
Typical 0 to 100 kW*
C1
Optional Slew-Rate Control
Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 72534
S-32132—Rev. A, 27-Oct-03
The Si1867DL is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
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