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| SI1865DL Datasheet, PDF (1/5 Pages) Vishay Siliconix – Load Switch with Level-Shift | |||
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New Product
Load Switch with Level-Shift
Si1865DL
Vishay Siliconix
PRODUCT SUMMARY
VDS2 (V)
rDS(on) (W)
1.8 to 8
0.215 @ VIN = 4.5 V
0.300 @ VIN = 2.5 V
0.440 @ VIN = 1.8 V
FEATURES
D 215-mW Low rDS(on) TrenchFETR
D 1.8 to 8-V Input
D 1.5 to 8-V Logic Level Control
ID (A)
"1.2
"1.0
"0.7
1.8ÄV Rated
D Low Profile, Small Footprint SC70-6 Package
D 2000-V ESD Protection On Input Switch, VON/OFF
D Adjustable Slew-Rate
DESCRIPTION
The Si1865DL includes a p- and n-channel MOSFET in a
single SC70-6 package. The low on-resistance p-channel
TrenchFET is tailored for use as a load switch. The n-channel,
with an external resistor, can be used as a level-shift to drive
the p-channel load-switch. The n-channel MOSFET has
internal ESD protection and can be driven by logic signals as
low as 1.5-V. The Si1865DL operates on supply lines from 1.8
to 8 V, and can drive loads up to 1.2 A.
APPLICATION CIRCUITS
Si1865DL
VIN
R1
4
Q2
6
2, 3
C1
6
5
ON/OFF
Co
Q1
Ci
1
R2
R2
VOUT
LOAD
GND
Switching Variation
R2 @ VIN = 2.5 V, R1 = 20 kW
20
IL = 1 A
VON/OFF = 3 V
Ci = 10 mF
16 Co = 1 mF
tr
12
tf
8
td(off)
4
td(on)
0
0
2
4
6
8
10
R2 (kW)
Note: For R2 switching variations with other VIN/R1
combinations See Typical Characteristics
COMPONENTS
R1
Pull-Up Resistor
Typical 10 kW to 1 mW*
R2
Optional Slew-Rate Control
Typical 0 to 100 kW*
C1
Optional Slew-Rate Control
Typical 1000 pF
*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.
Document Number: 71297
S-02987âRev. B, 29-Jan-01
The Si1865DL is ideally suited for high-side load switching in
portable applications. The integrated n-channel level-shift
device saves space by reducing external components. The
slew rate is set externally so that rise-times can be tailored to
different load types.
www.vishay.com
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