SI1563EDH_08 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Complementary 20-V (D-S) Low-Threshold MOSFET

New Product
Si1563EDH
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
- 20
r_DS(on) (Ω)
0.280 at V_GS = 4.5 V
0.360 at V_GS = 2.5 V
0.450 at V_GS = 1.8 V
0.490 at V_GS = - 4.5 V
0.750 at V_GS = - 2.5 V
1.10 at V_GS = - 1.8 V
SOT-363
SC-70 (6-LEADS)
I_D (A)
1.28
1.13
1.0
- 1.0
- 0.81
- 0.67
S₁ 1
G₁ 2
D₂ 3
6 D₁
5 _G2
4 S₂
Marking Code
EA XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1563EDH-T1
Si1563EDH-T1-E3 (Lead (Pb)-free)
FEATURES
• TrenchFET^® Power MOSFETS: 1.8 V Rated
• ESD Protected: 2000 V
• Thermally Enhanced SC-70 Package
APPLICATIONS
• Load Switching
• PA Switch
• Level Switch
Pb-free
Available
RoHS*
COMPLIANT
D₁
S₂
1k
G₁
G₂
N-Channel
S₁
3k
P-Channel
D₂
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol 5 s
Steady State
5s
Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
± 12
- 20
V
± 12
Continuous Drain Current (T_J = 150 °C)
T_A = 25 °C
T_A = 85 °C
I_D
1.28
0.92
1.13
- 1.0
- 0.88
0.81
- 0.72
- 0.63
A
Pulsed Drain Current
I_DM
4.0
- 3.0
Continuous Source Current (Diode Conduction)^a
I_S
0.61
0.48
- 0.61
- 0.48
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
0.74
0.38
0.57
0.30
0.30
0.16
0.57
W
0.3
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
130
170
80
Maximum
170
220
100
Unit
°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71416
S-80257-Rev. C, 04-Feb-08
www.vishay.com
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