SI1563EDH Datasheet, PDF (1/8 Pages) Vishay Siliconix – Complementary 20-V (D-S) Low-Threshold MOSFET

New Product
Si1563EDH
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
–20
r_DS(on) (W)
0.280 @ V_GS = 4.5 V
0.360 @ V_GS = 2.5 V
0.450 @ V_GS = 1.8 V
0.490 @ V_GS = –4.5 V
0.750 @ V_GS = –2.5 V
1.10 @ V_GS = –1.8 V
I_D (A)
1.28
1.13
1.00
–1.00
–0.81
–0.67
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 2000 V
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 _G2
D₂ 3
4 S₂
Top View
Marking Code
EA XX
G₁
Lot Traceability
and Date Code
Part # Code
D₁
1 kW
G₂
N-Channel
S₁
S₂
3 kW
P-Channel
D₂
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
"12
–20
V
"12
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 85_C
I_D
I_DM
1.28
1.13
0.92
0.81
4.0
–1.00
–0.88
–0.72
–0.63
A
–3.0
Continuous Source Current (Diode Conduction)^a
I_S
0.61
0.48
–0.61
–0.48
Maximum Power Dissipation^a
T_A = 25_C
0.74
0.57
0.30
0.57
T_A = 85_C
P_D
0.38
0.30
0.16
W
0.3
Operating Junction and Storage Temperature Range
T_J, T_stg
–55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71416
S-03943—Rev. B, 21-May-01
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
130
170
80
Maximum
170
220
100
Unit
_C/W
www.vishay.com
1