SI1563DH_10 Datasheet, PDF (1/14 Pages) Vishay Siliconix – Complementary 20 V (D-S) Low-Threshold MOSFET

Si1563DH
Vishay Siliconix
Complementary 20 V (D-S) Low-Threshold MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
- 20
R_DS(on) (Ω)
0.280 at V_GS = 4.5 V
0.360 at V_GS = 2.5 V
0.450 at V_GS = 1.8 V
0.490 at V_GS = - 4.5 V
0.750 at V_GS = - 2.5 V
1.10 at V_GS = - 1.8 V
I_D (A)
1.28
1.13
1.00
- 1.00
- 0.81
- 0.67
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs: 1.8 V Rated
• Thermally Enhanced SC-70 Package
• Fast Switching
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
SOT-363
SC-70 (6-LEADS)
S₁ 1
G₁ 2
D₂ 3
6 D₁
5 _G2
4 S₂
Marking Code
EB XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1563DH-T1-E3 (Lead (Pb)-free)
Si1563DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
D₁
S₂
G₂
G₁
S₁
N-Channel
D₂
P-Channel
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
5 s Steady State 5 s Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
±8
- 20
V
±8
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
1.28
0.92
1.13
- 1.00
- 0.88
0.81
- 0.72
- 0.63
A
Pulsed Drain Current
I_DM
4.0
- 3.0
Continuous Source Current (Diode Conduction)^a
I_S
0.61
0.48
- 0.61
- 0.48
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
0.74
0.38
0.57
0.30
0.30
0.16
0.57
0.3
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t≤5s
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Symbol
R_thJA
R_thJF
Document Number: 71963
S10-1054-Rev. B, 03-May-10
Typical
130
170
80
Maximum
170
220
100
Unit
°C/W
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