SI1557DH Datasheet, PDF (1/8 Pages) Vishay Siliconix – N- and P-Channel 1.8-V (G-S) MOSFET

New Product
Si1557DH
Vishay Siliconix
N- and P-Channel 1.8-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
12
P-Channel
-12
r_DS(on) (W)
0.235 @ V_GS = 4.5 V
0.280 @ V_GS = 2.5 V
0.340 @ V_GS = 1.8 V
0.535 @ V_GS = -4.5 V
0.880 @ V_GS = -2.5 V
1.26 @ V_GS = -1.8 V
I_D (A)
1.3
1.2
1.0
-0.86
-0.67
-0.56
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 _G2
D₂ 3
4 S₂
Top View
FEATURES
D TrenchFETr Power MOSFETs
D Thermally Enhanced SC-70 Package
D Fast Switching to Minimize Gate and
Switching Losses
APPLICATIONS
D Baseband DC/DC Converter Switch for
Portable Electronics
Marking Code
EC XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
12
-12
V
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 85_C
I_D
I_DM
1.3
1.2
0.9
0.8
3
- 0.86
-0.77
-0.62
-0.55
A
-2
Continuous Source Current (Diode Conduction)^a
I_S
0.5
0.39
-0.5
-0.39
Maximum Power Dissipation^a
T_A = 25_C
0.6
0.47
0.6
0.47
T_A = 85_C
P_D
0.3
0.25
0.3
W
0.25
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71944
S-21684—Rev. B, 30-Sep-02
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
170
220
105
Maximum
210
265
125
Unit
_C/W
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