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SI1555DL Datasheet, PDF (1/7 Pages) Vishay Siliconix – Complementary Low-Threshold MOSFET Pair
Si1555DL
Vishay Siliconix
Complementary Low-Threshold MOSFET Pair
PRODUCT SUMMARY
VDS (V)
N-Channel
20
P-Channel
-8
rDS(on) (W)
0.385 @ VGS = 4.5 V
0.630 @ VGS = 2.5 V
0.600 @ VGS = -4.5 V
0.850 @ VGS = -2.5 V
1.200 @ VGS = -1.8 V
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
G1 2
5 G2
D2 3
4 S2
Top View
ID (A)
"0.70
"0.54
"0.60
"0.50
"0.42
Marking Code
RB XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
20
VGS
"12
-8
V
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
TA = 25_C
TA = 85_C
ID
IDM
"0.70
"0.50
"0.66
"0.48
"0.60
"0.43
"1.0
"0.57
"0.41
A
Continuous Source Current (Diode Conduction)a
IS
0.25
0.23
-0.25
-0.23
Maximum Power Dissipationa
TA = 25_C
0.30
0.27
0.30
0.27
TA = 85_C
PD
0.16
0.14
0.16
W
0.14
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71079
S-21374—Rev. C, 12-Aug-02
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
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