SI1551DL_10 Datasheet, PDF (1/12 Pages) Vishay Siliconix – Complementary 20 V (D-S) MOSFET

Complementary 20 V (D-S) MOSFET
Si1551DL
Vishay Siliconix
PRODUCT SUMMARY
N-Channel
P-Channel
V_DS (V)
20
- 20
R_DS(on) (Ω)
1.9 at V_GS = 4.5 V
3.7 at V_GS = 2.7 V
4.2 at V_GS = 2.5 V
0.995 at V_GS = - 4.5 V
1.600 at V_GS = - 2.7 V
1.800 at V_GS = - 2.5 V
I_D (A)
0.30
0.22
0.21
- 0.44
- 0.34
- 0.32
Q_g (Typ.)
0.72
0.52
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
S₁ 1
G₁ 2
D₂ 3
6 D₁
5 _G2
4 S₂
Top View
Marking Code
RD XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1551DL-T1-E3 (Lead (Pb)-free)
Si1551DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
N-Channel
P-Channel
Parameter
Symbol
5 s Steady State 5 s Steady State ^Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
- 20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
0.30
0.22
0.29
- 0.44
- 0.41
0.21
- 0.31
- 0.30
A
Pulsed Drain Current
I_DM
0.6
- 1.0
Continuous Source Current (Diode Conduction)^a
I_S
0.25
0.23
- 0.25
- 0.23
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
0.30
0.16
0.27
0.14
0.30
0.16
0.27
0.14
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t≤5s
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
Symbol
R_thJA
R_thJF
Typical
360
400
300
Maximum
415
460
350
Unit
°C/W
Document Number: 71255
S10-0935-Rev. D, 19-Apr-10
www.vishay.com
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