SI1551DL_08 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Complementary 20-V (D-S) MOSFET

Si1551DL
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
20
P-Channel
−20
r_DS(on) (W)
1.9 @ V_GS = 4.5 V
3.7 @ V_GS = 2.7 V
4.2 @ V_GS = 2.5 V
0.995 @ V_GS = −4.5 V
1.600 @ V_GS = −2.7 V
1.800 @ V_GS = −2.5 V
I_D (A)
0.30
0.22
0.21
−0.44
−0.34
−0.32
Qg (Typ)
0.72
0.52
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 _G2
D₂ 3
4 S₂
Top View
Ordering Information: Si1551DL-T1
Si1551DL-T1—E3 (Lead (Pb)-Free)
Marking Code
RD XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
−20
V
V_GS
"12
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
T_A = 25_C
T_A = 85_C
I_D
I_DM
0.30
0.29
0.22
0.21
0.6
−0.44
−0.41
−0.31
−0.30
A
−1.0
Continuous Source Current (Diode Conduction)^a
I_S
0.25
0.23
−0.25
−0.23
Maximum Power Dissipation^a
T_A = 25_C
0.30
0.27
0.30
0.27
T_A = 85_C
P_D
0.16
0.14
0.16
W
0.14
Operating Junction and Storage Temperature Range
T_J, T_stg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71255
S-42353—Rev. C, 20-Dec-04
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
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