SI1539DL_08 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

Si1539DL
Vishay Siliconix
Complementary 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
N-Channel
30
P-Channel
-30
r_DS(on) (W)
0.480 @ V_GS = 10 V
0.700 @ V_GS = 4.5 V
0.940 @ V_GS = -10 V
1.700 @ V_GS = -4.5 V
I_D (A)
0.63
0.52
-0.45
-0.33
SOT-363
SC-70 (6-LEADS)
S₁ 1
6 D₁
G₁ 2
5 _G2
D₂ 3
4 S₂
Top View
Marking Code
RC XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
N-Channel
P-Channel
Parameter
Symbol 5 secs Steady State 5 secs Steady State Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
-30
V
V_GS
"20
T_A = 25_C
0.63
Continuous Drain Current (T_J = 150_C)^a
T_A = 85_C
I_D
0.45
Pulsed Drain Current
I_DM
0.54
- 0.45
0.43
-0.32
1.0
-0.42
-0.31
A
Continuous Source Current (Diode Conduction)^a
I_S
0.25
0.23
-0.25
-0.23
Maximum Power Dissipation^a
T_A = 25_C
0.30
0.27
0.30
0.27
T_A = 85_C
P_D
0.16
0.14
0.16
W
0.14
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71250
S-21374—Rev. B, 12-Aug-02
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
360
400
300
Maximum
415
460
350
Unit
_C/W
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