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| SI1539CDL Datasheet, PDF (1/16 Pages) Vishay Siliconix – N- and P-Channel 30 V (D-S) MOSFET | |||
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Si1539CDL
Vishay Siliconix
N- and P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (ï)
N-Channel
30
0.388 at VGS = 10 V
0.525 at VGS = 4.5 V
P-Channel
- 30 0.890 at VGS = - 10 V
1.7 at VGS = - 4.5 V
ID (A)a
0.7
0.6
- 0.5
- 0.3
Qg (Typ.)
0.55
0.8
SOT-363
SC-70 (6-LEADS)
S1 1
6 D1
Marking Code
G1 2
D2 3
5 G2
4 S2
RG XX
Lot Traceability
and Date Code
Part #
Code
Top View
Ordering Information: Si1539CDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg Tested
APPLICATIONS
⢠DC/DC Converter
⢠Load Switch
D1
S2
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
- 30
V
VGS
± 20
TC = 25 °C
0.7
- 0.5
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
0.6
0.7b, c
- 0.4
- 0.4b, c
TA = 70 °C
0.5b, c
- 0.4b, c
A
Source-Drain Current Diode Current
TC = 25 °C
TA = 25 °C
IS
0.3
0.2b, c
- 0.3
- 0.2b, c
Pulsed Drain Current
IDM
2
-1
TC = 25 °C
0.34
0.34
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
0.22
0.29b, c
0.22
W
0.29b, c
TA = 70 °C
0.18b, c
0.18b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
N-Channel
Typ.
Max.
Maximum Junction-to-Ambientb, d
t ï£ 10 s
RthJA
365
438
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
308
370
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 486 °C/W (N-Channel) and 486 °C/W (P-Channel).
Document Number: 67469
S11-0238-Rev. A, 14-Feb-11
P-Channel
Typ.
Max.
365
438
308
370
Unit
°C/W
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