SI1499DH_15 Datasheet, PDF (1/12 Pages) Vishay Siliconix – P-Channel 1.2 V (G-S) MOSFET

P-Channel 1.2 V (G-S) MOSFET
Si1499DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
-8
R_DS(on) (Ω)
0.078 at V_GS = - 4.5 V
0.095 at V_GS = - 2.5 V
0.115 at V_GS = - 1.8 V
0.153 at V_GS = - 1.5 V
0.424 at V_GS = - 1.2 V
SOT-363
SC-70 (6-LEADS)
I_D (A)^c
- 1.6
- 1.6
- 1.6
- 1.6
- 1.6^b
Q_g (Typ.)
10.5 nC
D1
D2
G3
6D
5D
4S
Marking Code
BI XX
Lot Traceability
and Date Code
Part #
Code
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Ultra-Low On-Resistance
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
- Guaranteed Operation at V_GS = 1.2 V
Critical for Optimized Design and Longer Battery Life
S
G
Top View
Ordering Information: Si1499DH-T1-E3 (Lead (Pb)-free)
Si1499DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^{a, b}
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source-Drain Diode Current^{a, b}
Maximum Power Dissipation^{a, b}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{c, d}
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
D
P-Channel MOSFET
Limit
-8
±5
-1.6^c
- 1.6^c
- 1.6^{a, b, c}
- 1.6^{a, b, c}
- 6.5^c
- 1.6^c
- 1.3^{a, b}
2.78
1.78
2.5^{a, b}
1^{a, b}
- 55 to 150
260
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
R_thJA
R_thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Document Number: 73338
S10-0792-Rev. F, 05-Apr-10
www.vishay.com
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