SI1488DH Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

New Product
N-Channel 20-V (D-S) MOSFET
Si1488DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.049 at V_GS = 4.5 V
20
0.056 at V_GS = 2.5 V
0.065 at V_GS = 1.8 V
I_D (A)
6.1^a
5.7
5.3
Q_g (Typ)
6.0
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g & UIS Tested
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D1
D2
G3
6D
5D
4S
Marking Code
AG XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1488DH-T1-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V_GS
±8
V
T_C = 25 °C
6.1
Continuous Drain Current (T_J = 150 °C)^a
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
4.9
4.6^{b, c}
3.7^{b, c}
A
Pulsed Drain Current
I_DM
20
Avalanche Current
Repetitive Avalanche Energy
L = 0.1 mH
I_AS
10
E_AS
5
mJ
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.3
1.3^{b, c}
A
T_C = 25 °C
2.8
Maximum Power Dissipation^a
T_C = 70 °C
T_A = 25 °C
P_D
1.8
1.5^{b, c}
W
T_A = 70 °C
1.0^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.
Document Number: 73788
S-61085–Rev. C, 19-Jun-06
Symbol
R_thJA
R_thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
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