SI1480DH Datasheet, PDF (1/12 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

N-Channel 100 V (D-S) MOSFET
Si1480DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
100
R_DS(on) () Max.
0.200 at V_GS = 10 V
0.320 at V_GS = 4.5 V
I_D (A)
2.6^a
2.2
Q_g (Typ.)
1.8
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switches
• DC/DC Converters
• Power Management
• LED Backlighting
SOT-363
SC-70 (6-LEADS)
D
D1
6D
Marking Code
D2
G3
5D
4S
AU XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1480DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current (t = 300 µs)
Avalanche Current
Repetitive Avalanche Energy
Continuous Source-Drain Diode Current
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
L = 0.1 mH
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
I_S
P_D
T_J, T_stg
100
± 20
2.6^a
2.2
2.1^b,c
1.7^b,c
7
2.4
0.29
2.3
1.3^b,c
2.8
1.8
1.5^b,c
1^b,c
- 55 to 150
Unit
V
A
mJ
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b,d
Maximum Junction-to-Foot (Drain)
t 5 s
Steady State
Notes:
a. Package Limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
R_thJA
R_thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Document Number: 67327
For technical questions, contact: [e-mail]
www.vishay.com
S12-2727-Rev. A, 12-Nov-12
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000