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| SI1470DH_10 Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET | |||
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N-Channel 30 V (D-S) MOSFET
Si1470DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.066 at VGS = 4.5 V
0.095 at VGS = 2.5 V
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
ID (A)
4.0a
4.0
Qg (Typ.)
4.85
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠100 % Rg and UIS Tested
⢠Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
⢠Load Switch
D
Marking Code
AK XX
Lot Traceability
and Date Code
G
Part # Code
Top View
Ordering Information: Si1470DH-T1-E3 (Lead (Pb)-free)
Si1470DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 12
TC = 25 °C
5.1
Continuous Drain Current (TJ = 150 °C)a
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
4.0
3.8b, c
3.1b, c
A
Pulsed Drain Current
IDM
12
Avalanche Current
Repetitive Avalanche Energy
L = 0.1 mH
IAS
10
EAS
5
mJ
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
2.3
1.3b, c
A
TC = 25 °C
2.8
Maximum Power Dissipationa
TC = 70 °C
TA = 25 °C
PD
1.8
1.5b, c
W
TA = 70 °C
1.0b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
tâ¤5s
Steady State
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 74277
S10-0646-Rev. B, 22-Mar-10
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
°C/W
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