SI1467DH Datasheet, PDF (1/7 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si1467DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.090 at V_GS = - 4.5 V
- 20
0.115 at V_GS = - 2.5 V
0.150 at V_GS = - 1.8 V
I_D (A)^c
- 1.6
- 1.6
- 1.6
Q_g (Typ.)
9.0 nC
FEATURES
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
APPLICATIONS
• Load Switch for Portable Devices
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D1
D2
G3
6D
5D
4S
Marking Code
AN XX
Lot Traceability
and Date Code
Part #
Code
Top View
Ordering Information: Si1467DH-T1-E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current (10 µs Pulse Width)
I_DM
Continuous Source-Drain Diode Current^{a, b}
T_C = 25 °C
T_A = 25 °C
I_S
T_C = 25 °C
Maximum Power Dissipation^{a, b}
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Soldering Recommendations (Peak Temperature)^{c, d}
Limit
- 20
±8
- 1.6^c
- 1.6^c
- 1.6^{a, b, c}
- 1.6^{a, b, c}
- 6.5^c
- 1.6^c
- 1.25^{a, b, c}
2.78
1.78
1.5^{a, b}
1^{a, b}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{a, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. t = 5 s.
c. Package limited.
d. Maximum under Steady State conditions is 125 °C/W.
Symbol
R_thJA
R_thJF
Typical
60
34
Maximum
80
45
Unit
V
A
W
°C
Unit
°C/W
Document Number: 68663
S-81216-Rev. A, 02-Jun-08
www.vishay.com
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