SI1450DH Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 8-V (D-S) MOSFET

New Product
N-Channel 8-V (D-S) MOSFET
Si1450DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.047 at V_GS = 4.5 V
0.051 at V_GS = 2.5 V
8
0.058 at V_GS = 1.8 V
0.069 at V_GS = 1.5 V
I_D (A)^a
4.0^a
4.0^a
4.0^a
4.0^a
Q_g (Typ)
4.24 nC
FEATURES
• TrenchFET^® Power MOSFET: 1.5 V Rated
• 100 % R_g Tested
APPLICATIONS
RoHS
COMPLIANT
• Load Switch for Portable Applications
- Guaranteed Operation at V_GS = 1.5 V
Critical for Optimized Design and Space Savings
SOT-363
SC-70 (6-LEADS)
D1
D2
G3
6D
5D
4S
Marking Code
AH XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1450DH-T1-E3 (Lead (Pb)-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
8
±5
6.04^a
4.8^a
4.53^a
3.62^a
15
2.3
1.3^c
2.78
1.78
1.56^{b, c}
1.0^{b, c}
- 55 to 150
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
Steady State
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 5 sec.
d. Maximum under Steady State conditions is 125 °C/W.
Symbol
R_thJA
R_thJF
Typical
60
34
Maximum
80
45
Unit
V
A
W
°C
Unit
°C/W
Document Number: 74275
S-62079-Rev. A, 23-Oct-06
www.vishay.com
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