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SI1443EDH Datasheet, PDF (1/12 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET
New Product
P-Channel 30 V (D-S) MOSFET
Si1443EDH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
- 30
RDS(on) ()
0.054 at VGS = - 10 V
0.062 at VGS = - 4.5 V
0.085 at VGS = - 2.5 V
ID (A)
- 4a
- 4a
- 3.4
Qg (Typ.)
8.6 nC
SOT -363
SC-70 (6-LEADS)
D1
6D
D2
5D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• Typical ESD Performance 1500 V HBM
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch for Portable Devices
- Cellular Phone
- DSC
- Portable Game Console
- MP3
- GPS
• Soft Turn-on Load Switch
S
G3
4S
Top View
Ordering Information:
Si1443EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
Part # code
BTX
XXX
Lot Traceability
and Date code
G
R
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
± 12
TC = 25 °C
- 4a
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID
- 4a
- 4a, b, c
TA = 70 °C
- 3.4b, c
A
Pulsed Drain Current (t = 300 µs)
IDM
- 15
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
- 2.3
- 1.3b, c
TC = 25 °C
2.8
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
1.8
1.6b, c
W
TA = 70 °C
1b, c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
RthJA
RthJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Document Number: 67849
www.vishay.com
S11-0869-Rev. A, 02-May-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000