SI1433DH_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
P-Channel 30-V (D-S) MOSFET
Si1433DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
- 30
0.150 at V_GS = - 10 V
0.260 at V_GS = - 4.5 V
I_D (A)
- 2.2
- 1.6
FEATURES
• TrenchFET^® Power MOSFETS: 1.8 V Rated
• Thermally Enhanced SC-70 Package
APPLICATIONS
• Load Switches
- Notebook PC
- Servers
Pb-free
Available
RoHS*
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D1
D2
G3
6D
5D
4S
Marking Code
BE XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1433DH-T1
Si1433DH-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
- 2.2
- 1.7
- 1.9
- 1.4
A
I_DM
-8
Continuous Diode Current (Diode Conduction)^a
I_S
- 1.4
- 0.9
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
1.45
0.95
0.75
0.5
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72323
S-71951-Rev. B, 10-Sep-07
Typical
65
105
38
Maximum
85
130
48
Unit
°C/W
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