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SI1433DH Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET
New Product
P-Channel 30-V (D-S) MOSFET
Si1433DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.150 @ VGS = - 10 V
- 30
0.260 @ VGS = - 4.5 V
ID (A)
- 2.2
- 1.6
FEATURES
D TrenchFETr Power MOSFETS: 1.8-V Rated
D Thermally Enhanced SC-70 Package
APPLICATIONS
D Load Switches
- Notebook PCs
- Servers
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Ordering Information: Si1433DH-T1
Marking Code
BE XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
VGS
"20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
- 2.2
- 1.9
- 1.7
- 1.4
-8
- 1.4
- 0.9
1.45
0.95
0.75
0.5
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72323
S-31668—Rev. A, 11-Aug-03
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
65
105
38
Maximum
85
130
48
Unit
_C/W
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