SI1431DH Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

P-Channel 30 V (D-S) MOSFET
Si1431DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
- 30
0.200 at V_GS = - 10 V
0.355 at V_GS = - 4.5 V
I_D (A)
- 2.0
- 1.6
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch
- Notebook PC
- Servers
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
G3
5D
4S
Top View
Marking Code
BF XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1431DH-T1-E3 (Lead (Pb)-free)
Si1431DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
V_DS
- 30
Gate-Source Voltage
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 85 °C
I_D
- 2.0
- 1.5
- 1.7
- 1.2
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
I_DM
-8
I_S
- 1.2
- 0.8
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
1.45
0.95
0.75
0.5
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Note:
a. Surface mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
65
105
40
Maximum
85
130
50
Unit
V
A
W
°C
Unit
°C/W
Document Number: 72694
S10-0646-Rev. B, 22-Mar-10
www.vishay.com
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