SI1426DH_10 Datasheet, PDF (1/10 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET
Si1426DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.075 at V_GS = 10 V
0.115 at V_GS = 4.5 V
I_D (A)
3.6
2.9
SOT-363
SC-70 (6-LEADS)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Thermally Enhanced SC-70 Package
• PWM Optimized
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Boost Converter in Portable Devices
- Low Gate Charge (3 nC)
• Low Current Synchronous Rectifier
D1
6D
D2
G3
5D
4S
Marking Code
AC XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1426DH-T1-E3 (Lead (Pb)-free)
Si1426DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
3.6
2.8
2.6
2.1
A
I_DM
10
Continuous Diode Current (Diode Conduction)^a
I_S
1.3
0.8
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
1.6
1.0
0.8
0.5
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Note:
a. Surface mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
60
100
34
Maximum
80
125
45
Unit
°C/W
Document Number: 71805
S10-0935-Rev. B, 19-Apr-10
www.vishay.com
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