SI1426DH Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si1426DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.075 @ V_GS = 10 V
30
0.115 @ V_GS = 4.5 V
I_D (A)
3.6
2.9
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
FEATURES
D TrenchFETr Power MOSFET
D Thermally Enhanced SC-70 Package
D PWM Optimized
APPLICATIONS
D Boost Converter in Portable Devices
– Low Gate Charge (3 nC)
D Low Current Synchronous Rectifier
Marking Code
AC XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
V_GS
30
"20
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
3.6
2.8
2.6
2.1
10
1.3
0.8
1.6
1.0
0.8
0.5
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71805
S-05803—Rev. A, 18-Feb-02
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
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