SI1422DH Datasheet, PDF (1/12 Pages) Vishay Siliconix – N-Channel 12 V (D-S) MOSFET

New Product
N-Channel 12 V (D-S) MOSFET
Si1422DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
12
R_DS(on) (Ω)
0.026 at V_GS = 4.5 V
0.030 at V_GS = 2.5 V
0.036 at V_GS = 1.8 V
I_D (A)^a
4
4
4
Q_g (Typ.)
7.5 nC
SOT-363
SC-70 (6-LEADS)
D1
6D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch, PA Switch and Battery Switch for Portable
Devices
• High Frequency dc-to-dc Converters
• Low On-Resistance Switching
D
D2
G3
5D
4S
Top View
Marking Code
AO XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1422DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_F = 25 °C
Continuous Drain Current (T_J = 150 °C)
T_F = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
Maximum Power Dissipation
T_F = 25 °C
T_A = 25 °C
I_S
T_F = 25 °C
T_F = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T_J, T_stg
Limit
12
±8
4^a
4^a
4^{b, c}
4^{b, c}
20
2.3^a
1.3^{b, c}
2.8
1.8
1.56^{b, c}
1.0^{b, c}
- 55 to 150
260
G
S
N-Channel MOSFET
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. T_F = 25 °C, package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 66701
S10-1287-Rev. A, 31-May-10
Symbol
R_thJA
R_thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
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