SI1419DH_08 Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 200-V (D-S) MOSFET

New Product
P-Channel 200-V (D-S) MOSFET
Si1419DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
−200
5.0 @ V_GS = −10 V
5.1 @ V_GS = −6 V
I_D (A)
−0.38
−0.37
Q_g (Typ)
4.1
SOT-363
SC-70 (6-LEADS)
FEATURES
D TrenchFETr Power MOSFETS
D Small, Thermally Enhanced SC-70
Package
D Ultra Low On-Resistance
Pb-free
Available
APPLICATIONS
D Active Clamp Switch in DC/DC Power
Supplies
S
D1
D2
G3
6D
5D
4S
Top View
Marking Code
BH XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1419DH-T1—E3
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
L = 0.1 mH
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
−200
"20
−0.38
−0.3
−0.27
−0.22
−0.5
−1.3
−0.83
−1.9
0.18
1.56
1.0
0.81
0.52
−55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73241
S-50368—Rev. B, 28-Feb-05
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
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