SI1416EDH Datasheet, PDF (1/12 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

New Product
N-Channel 30 V (D-S) MOSFET
Si1416EDH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) (Ω)
0.058 at V_GS = 10 V
0.064 at V_GS = 4.5 V
0.077 at V_GS = 2.5 V
I_D (A)^a
3.9
3.9
3.9
Q_g (Typ.)
3.5 nC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
G3
5D
4S
Top View
Marking Code
AR XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1416EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Typical ESD Protection 1500 V in HBM
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Portable Devices such as Smart Phones and Tablet PCs
- DC/DC Converters
D
- High Frequency Switching
- OVP Switch
- Load Switch
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 12
T_C = 25 °C
3.9^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
3.9^a
3.9^{a, b, c}
T_A = 70 °C
3.9^{a, b, c}
A
Pulsed Drain Current (t = 300 µs)
I_DM
15
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
2.3^a
1.3^{b, c}
T_C = 25 °C
2.8
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.8
1.56^{b, c}
W
T_A = 70 °C
1.0^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited, T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
R_thJA
R_thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
Document Number: 67580
www.vishay.com
S11-0611-Rev. A, 04-Apr-11
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000