SI1414DH Datasheet, PDF (1/12 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

New Product
N-Channel 30 V (D-S) MOSFET
Si1414DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.046 at V_GS = 4.5 V
30
0.050 at V_GS = 2.5 V
0.057 at V_GS = 1.8 V
I_D (A)^a
4
4
4
Q_g (Typ.)
5.7 nC
SOT-363
SC-70 (6-LEADS)
D1
6D
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• DC/DC Converters
• Boost Converters
• Load Switches
D
D2
G3
5D
4S
Top View
Marking Code
AP XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1414DH-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
±8
T_F = 25 °C
4^a
Continuous Drain Current (T_J = 150 °C)
T_F = 70 °C
T_A = 25 °C
I_D
4^a
4^{a, b, c}
T_A = 70 °C
3.7^{a, b, c}
A
Pulsed Drain Current
I_DM
20
T_C = 25 °C
Continuous Source-Drain Diode Current
T_A = 25 °C
I_S
2.3
1.3^{b, c}
T_C = 25 °C
2.8
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.8
1.56^{b, c}
W
T_A = 70 °C
1.0^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)^{d, e}
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Symbol
R_thJA
R_thJF
Document Number: 67073
S10-2427-Rev. A, 25-Oct-10
Typical
60
34
Maximum
80
45
Unit
°C/W
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