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SI1411DH Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 150-V (D-S) MOSFET | |||
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New Product
Si1411DH
Vishay Siliconix
P-Channel 150-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
â150
2.6 @ VGS = â10 V
2.7 @ VGS = â6 V
ID (A)
â0.52
â0.51
Qg (Typ)
4.2 nC
FEATURES
D TrenchFETr Power MOSFETS
D Small, Thermally Enhanced SC-70 Package
D Ultra Low On-Resistance
APPLICATIONS
D Active Clamp Circuits in DC/DC Power
Supplies
Product Is
Completely
Pb-free
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
BG XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1411DH-T1âE3
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Single Pulse Avalanche Current
Single Pluse Avalanch Energy
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
L = 0.1 mH
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
â150
"20
â0.52
â0.42
â0.38
â0.3
â0.8
â1.3
â0.83
â2.1
0.22
1.56
1.0
0.81
0.52
â55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
Document Number: 73242
S-50461âRev. B, 14-Mar-05
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
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