SI1410EDH_10 Datasheet, PDF (1/11 Pages) Vishay Siliconix – N-Channel 20 V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET
Si1410EDH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
20
R_DS(on) (Ω)
0.070 at V_GS = 4.5 V
0.080 at V_GS = 2.5 V
0.100 at V_GS = 1.8 V
I_D (A)
3.7
3.4
3.0
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Marking Code
AA XX
Lot Traceability
and Date Code
Part # Code
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFETs: 1.8 V Rated
• ESD Protected: 2000 V
• Thermally Enhanced SC-70 Package
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switching
• PA Switch
D
• Level Switch
1 kΩ
G
Top View
S
Ordering Information: Si1410EDH-T1-E3 (Lead (Pb)-free)
Si1410EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
3.7
2.9
2.6
2.0
A
I_DM
8
Continuous Diode Current (Diode Conduction)^a
I_S
1.4
0.9
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
1.56
1.0
0.81
0.52
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
60
100
34
Maximum
80
125
45
Unit
°C/W
Document Number: 71409
S10-0935-Rev. B, 19-Apr-10
www.vishay.com
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