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SI1407DL Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET | |||
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New Product
P-Channel 1.8-V (G-S) MOSFET
Si1407DL
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.130 @ VGS = â4.5 V
â12
0.170 @ VGS = â2.5 V
0.225 @ VGS = â1.8 V
ID (A)
â1.8
â1.5
â1.3
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
OC XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
â12
"8
â1.8
â1.6
â1.4
â1.2
â5
â0.8
â0.8
0.625
0.568
0.400
0.295
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
Document Number: 71074
S-01561âRev. C, 17-Jul-00
t v 5 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
165
180
105
Maximum
200
220
130
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
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