SI1407DL-T1 Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 1.8-V (G-S) MOSFET

P-Channel 1.8-V (G-S) MOSFET
Si1407DL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.130 at V_GS = - 4.5 V
- 12
0.170 at V_GS = - 2.5 V
0.225 at V_GS = - 1.8 V
I_D (A)
- 1.8
- 1.5
- 1.3
FEATURES
• TrenchFET^® Power MOSFETs
• 1.8 V Rated
Pb-free
Available
RoHS*
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Marking Code
OC XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1407DL-T1
Si1407DL-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
I_DM
- 1.8
- 1.6
- 1.4
- 1.2
A
-5
Continuous Diode Current (Diode Conduction)^a
I_S
- 0.8
- 0.8
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25 °C
T_A = 85 °C
P_D
0.625
0.400
0.568
0.295
W
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
165
180
105
Maximum
200
220
130
Unit
°C/W
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 71074
S-61009–Rev. D, 12-Jun-06
www.vishay.com
1