SI1406DH_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET
Si1406DH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.065 @ V_GS = 4.5 V
20
0.075 @ V_GS = 2.5 V
0.096 @ V_GS = 1.8 V
I_D (A)
3.9
3.6
3.2
SOT-363
SC-70 (6-LEADS)
FEATURES
D TrenchFETr Power MOSFETS
D 1.8-V Rated
D Thermally Enhanced SC-70
Package
APPLICATIONS
D Load Switching
D PA Switch
D Level Switch
D1
6D
D2
G3
5D
4S
Top View
Marking Code
AB XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1406DH-T1
Si1406DH-T1—E3 (Lead (Pb)-Free)
Pb-free
Available
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"8
3.9
3.1
2.8
2.2
10
1.4
0.9
1.56
1.0
0.81
0.52
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 70684
S-50366—Rev. B, 28-Feb-05
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
60
100
34
Maximum
80
125
45
Unit
_C/W
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