SI1404BDH Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30 V (D-S) MOSFET

N-Channel 30 V (D-S) MOSFET
Si1404BDH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
30
R_DS(on) (Ω)
0.238 at V_GS = 4.5 V
0.380 at V_GS = 2.5 V
I_D (A)^a
1.9
1.51
Q_g (Typ.)
1.1 nC
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
SC-70 (6-LEADS)
APPLICATIONS
• Load Switch for Portable Device
D1
6D
D
D2
G3
5D
4S
Top View
Marking Code
AF X
Lot
Traceability
and Date Code
Part #
Code
Ordering Information: Si1404BDH-T1-E3 (Lead (Pb)-free)
Si1404BDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
T_C = 25 °C
T_A = 25 °C
T_C = 25 °C
T_C = 70 °C
T_A = 25 °C
T_A = 70 °C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
Limit
30
± 12
2.37
1.90
1.90
1.52^{b, c}
4
1.89
1.1^{b, c}
2.28
1.45
1.32^{b, c}
0.94^{b, c}
- 55 to 150
Unit
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^d
t≤5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Based on T_C = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 100 °C/W.
Document Number: 73487
S10-0645-Rev. B, 22-Mar-10
Symbol
R_thJA
R_thJF
Typical
70
44
Maximum
85
55
Unit
°C/W
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