SI1403DL Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

New Product
P-Channel 2.5-V (G-S) MOSFET
Si1403DL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.180 @ V_GS = –4.5 V
–20
0.200 @ V_GS = –3.6 V
0.265 @ V_GS = –2.5 V
I_D (A)
"1.5
"1.4
"1.2
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
OA XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
–20
V_GS
"12
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Diode Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
"1.5
"1.4
"1.2
"1.0
"5
–0.8
–0.8
0.625
0.568
0.400
0.295
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71072
S-01559—Rev. B, 17-Jul-00
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
165
180
105
Maximum
200
220
130
Unit
_C/W
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