SI1403BDL Datasheet, PDF (1/6 Pages) Vishay Siliconix – P-Channel 2.5-V (G-S) MOSFET

New Product
P-Channel 2.5-V (G-S) MOSFET
Si1403BDL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.150 at V_GS = - 4.5 V
- 20
0.175 at V_GS = - 3.6 V
0.265 at V_GS = - 2.5 V
I_D (A)
- 1.5
- 1.4
- 1.2
Q_g (Typ)
2.9
FEATURES
• TrenchFET^® Power MOSFET
RoHS
COMPLIANT
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Marking Code
OD XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1403BDL-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
- 1.5
- 1.2
- 1.4
- 1.0
A
I_DM
-5
Continuous Diode Current (Diode Conduction)^a
I_S
- 0.8
- 0.8
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
0.625
0.400
0.568
0.295
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
165
180
105
Maximum
200
220
130
Unit
°C/W
Document Number: 73253
S-71951-Rev. B, 10-Sep-07
www.vishay.com
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