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SI1402DH Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET
New Product
N-Channel 30-V (D-S) MOSFET
Si1402DH
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.077 @ VGS = 4.5 V
30
0.120 @ VGS = 2.5 V
ID (A)
3.4
2.5
FEATURES
D TrenchFETr Power MOSFET: 2.5-V Rated
APPLICATIONS
D Load Switch for Portable Applications
Product Is
Completely
Pb-free
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Top View
Ordering Information: Si1402DH-T1—E3
Marking Code
AE XX
Lot Traceability
and Date Code
Part # Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
PD
TJ, Tstg
30
"12
3.4
2.7
2.7
2.2
8
1.2
0.8
1.45
0.95
0.94
0.6
−55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 73328
S-50527—Rev. A, 28-Mar-05
Symbol
RthJA
RthJF
Typical
65
87
40
Maximum
85
130
50
Unit
_C/W
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