SI1401EDH Datasheet, PDF (1/12 Pages) Vishay Siliconix – P-Channel 12 V (D-S) MOSFET

New Product
P-Channel 12 V (D-S) MOSFET
Si1401EDH
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) ()
0.034 at V_GS = - 4.5 V
I_D (A)^a
-4
Q_g (Typ.)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
- 12
0.046 at V_GS = - 2.5 V
0.070 at V_GS = - 1.8 V
0.110 at V_GS = - 1.5 V
-4
14.1 nC
-4
-4
• Typical ESD Performance 1500 V
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-363
SC-70 (6-LEADS)
• Load Switch, PA Switch and Battery Switch for Portable
Devices
- Cellular Phone
S
D1
6D
- DSC
- Portable Game Console
D2
G3
5D
4S
Marking Code
Part # code
BPX
XXX
- MP3
- GPS
G
R
Top View
Lot Traceability
and Date code
D
Ordering Information: Si1401EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V
V_GS
± 10
T_C = 25 °C
- 4^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
- 4^a
- 4^{a, b, c}
T_A = 70 °C
- 4^{a, b, c}
A
Pulsed Drain Current
I_DM
- 25
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
- 2.3
- 1.3^{b, c}
T_C = 25 °C
2.8
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
1.8
1.6^{b, c}
W
T_A = 70 °C
1.0^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
t5s
Maximum Junction-to-Foot (Drain)
Steady State
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 125 °C/W.
Document Number: 70080
S10-1537-Rev. A, 19-Jul-10
Symbol
R_thJA
R_thJF
Typical
60
34
Maximum
80
45
Unit
°C/W
www.vishay.com
1