SI1400DL Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

N-Channel 20 V (D-S) MOSFET
Si1400DL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
- 20
R_DS(on) (Ω)
0.150 at V_GS = 4.5 V
0.235 at V_GS = 2.5 V
I_D (A)
1.7
1.3
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET: 2.5 V Rated
• Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
D1
6D
D2
5D
G3
4S
Marking Code
ND XX
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1400DL-T1-E3 (Lead (Pb)-free)
Si1400DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
20
V
V_GS
± 12
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 85 °C
I_D
1.7
1.6
1.2
1.0
A
I_DM
5
Continuous Source Current (Diode Conduction)^a
I_S
0.8
0.8
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 85 °C
P_D
0.625
0.40
0.568
0.295
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
165
180
105
Maximum
200
220
130
Unit
°C/W
Document Number: 71179
S10-0721-Rev. D, 29-Mar-10
www.vishay.com
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