SI1330EDL_10 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 60 V (D-S) MOSFET

N-Channel 60 V (D-S) MOSFET
Si1330EDL
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
60
R_DS(on) (Ω)
2.5 at V_GS = 10 V
3 at V_GS = 4.5 V
8 at V_GS = 3 V
I_D (A)
0.25
0.23
0.05
SOT-323
SC-70 (3-LEADS)
G1
S2
3D
Top View
Marking Code
KD XX
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1330EDL-T1-E3 (Lead (Pb)-free)
Si1330EDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• ESD Protected: 2000 V
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• P-Channel Driver
- Notebook PC
- Servers
D
G
S
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
60
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
0.25
0.24
0.2
0.19
A
I_DM
1.0
Continuous Source Current (Diode Conduction)^a
I_S
0.26
0.23
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
0.31
0.28
0.20
0.18
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
355
380
285
Maximum
400
450
340
Unit
°C/W
Document Number: 72861
S10-0721-Rev. B, 29-Mar-10
www.vishay.com
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